Kingston DDR3 204pin Non-ECC 1600MT/s / PC3-12800 CL11
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4GB 8 CHIPS SO DIMM CL11 / 1.5V
ValueRAM's KVR16S11S8/4 is a 512M x 64-bit (4GB) DDR3-1600 CL11 SDRAM (Synchronous DRAM) 1Rx8, memory module, based on eight 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.5V. This 204-pin SODIMM uses gold contact fingers.
8GB 16 CHIPS
This document describes ValueRAM's 1G x 64-bit (8GB) DDR3- 1600 CL11 SDRAM (Synchronous DRAM) 2Rx8, memory module, based on sixteen 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.5V. This 204-pin SODIMM uses gold contact fingers.
FEATURES
• JEDEC standard 1.5V Power Supply
• VDDQ = 1.5V
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component
SPECIFICATIONS
CL(IDD) | 11 cycles |
Row Cycle Time (tRCmin) | 48.125ns(min.) |
Refresh to Active/Refresh Command Time (tRFCmin) |
260ns(min.) |
Row Active Time (tRASmin) | 35ns(min.) |
UL Rating | 94 V - 0 |
Operating Temperature | 0℃ to +85℃ |
Storage Temperature | -55℃ to +100℃ |
*以上产品描述仅供参考,产品资料均以产品官网为准。
Kingston DDR3 204pin Non-ECC 1600MT/s / PC3-12800 CL11