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Kingston DDR3 204pin Non-ECC 1600MT/s / PC3-12800 CL11

HK$300.00
 每 
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產品資料

4GB  8 CHIPS SO DIMM CL11 / 1.5V  

ValueRAM's KVR16S11S8/4 is a 512M x 64-bit (4GB) DDR3-1600 CL11 SDRAM (Synchronous DRAM) 1Rx8, memory module, based on eight 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.5V. This 204-pin SODIMM uses gold contact fingers. 

8GB 16 CHIPS

This document describes ValueRAM's 1G x 64-bit (8GB) DDR3- 1600 CL11 SDRAM (Synchronous DRAM) 2Rx8, memory module, based on sixteen 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.5V. This 204-pin SODIMM uses gold contact fingers. 

FEATURES
• JEDEC standard 1.5V Power Supply
• VDDQ = 1.5V
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component

SPECIFICATIONS

 CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns(min.)
Refresh to Active/Refresh
Command Time (tRFCmin)
260ns(min.)
Row Active Time (tRASmin) 35ns(min.)
UL Rating 94 V - 0
Operating Temperature 0 to +85
Storage Temperature -55 to +100

*以上產品描述僅供參考,產品資料均以產品官網為準。

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Kingston DDR3 204pin Non-ECC 1600MT/s / PC3-12800 CL11